@misc{oai:repo.qst.go.jp:00066377,
 author = {Capan, Ivana and Sato, Shinichiro and Pastuovic, Zeljko and Brodar, Tomislav and Hoshino, Norihiro and Tsuchida, Hidekazu and Ohshima, Takeshi and 佐藤 真一郎 and 大島 武},
 month = {Aug},
 note = {We present a study of deep level defects created in isolated ion cascades produced in nitrogen-low-doped 4H-SiC epitaxial layers by implantation of either accelerated H (600 keV) or He (2 MeV) ions using fast-scanning reduced-rate microbeams, in the so-called single ion regime. In the first DLTS measurement, defects labelled as ET2 (0.65 eV) and EH3 (1.06 eV) have been clearly distinguished from the presence of the dominant carbon vacancies (Z1/2 and EH6/7) in increased concentrations for irradiated samples. However, the second DLTS measurement revealed the almost complete removal of ET2 trap and the partial removal of EH3 trap, while the concentrations of Z1/2 and EH6/7 traps have further increased, due to the relatively low temperature annealing up to 700 K, accomplished during the first temperature scan of DLTS measurement. Since majority carrier concentration reduced after irradiation recovers with decreasing ET2 and EH3, those might act as majority carrier removal traps., 29th International Conference on Defects in Semiconductors (ICDS2017)},
 title = {Deep level defects in single ion regime implanted 4H-SiC epitaxial layers},
 year = {2017}
}