{"created":"2023-05-15T14:48:18.035036+00:00","id":66186,"links":{},"metadata":{"_buckets":{"deposit":"e3fa46d8-1984-423a-92e1-e7ffcb675560"},"_deposit":{"created_by":1,"id":"66186","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"66186"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00066186","sets":["10:29"]},"author_link":["651454","651455","651456","651453"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-03-09","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"窒化物半導体は1993年に高輝度青色LEDが発表されて以降、比較的短時間で普及に至ったという経緯から、今なお、表面、界面、ひずみ、欠陥構造など未知な部分が取り残されたままである。我々はこれらの結晶成長の基礎を十分に理解することが、デバイスの極限性能を追求するためには重要と考え、放射光X線を利用した結晶成長その場測定システムを開発した。本講演では同システムを利用して最近得られた窒化物半導体薄膜のひずみ緩和観測の結果を報告する。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"共用・計測合同シンポジウム2017","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"651453","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"651454","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"651455","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"651456","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"放射光X線による窒化物半導体薄膜成長のリアルタイム構造解析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"放射光X線による窒化物半導体薄膜成長のリアルタイム構造解析"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-03-17"},"publish_date":"2017-03-17","publish_status":"0","recid":"66186","relation_version_is_last":true,"title":["放射光X線による窒化物半導体薄膜成長のリアルタイム構造解析"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:51:47.917800+00:00"}