{"created":"2023-05-15T14:48:17.856452+00:00","id":66182,"links":{},"metadata":{"_buckets":{"deposit":"e0a460e5-f041-456e-b8a3-90cc279f835c"},"_deposit":{"created_by":1,"id":"66182","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"66182"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00066182","sets":["10:29"]},"author_link":["651429","651430","651427","651428"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-03-15","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"III-V族混晶半導体であるInGaAsはInとGaの組成比によって、バンドギャップエネルギーを幅広く制御できる特徴があり、多接合型太陽電池のサブセル材料として注目されている。太陽電池として使用するには、一般的に貫通転位密度が10^5 /cm^2以下のひずみ緩和した膜が理想である。GaAs(111)A基板は、InAs薄膜を成長した際に、ヘテロ界面にのみ転位が集中し、貫通転位が発生しにくいなど、GaAs(001)基板とは異なる特徴が報告されており、貫通転位密度の低減に有効な基板として注目されている。そこで本研究は、GaAs(111)A基板上のInGaAs薄膜のひずみ緩和過程を明らかにすることを目的として、放射光その場X線回折によるInGaAs/ InAs/GaAs(111)A界面の構造解析を行った。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"応用物理学会春季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"651427","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"651428","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"651429","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"651430","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"放射光その場X線回折によるInGaAs/InAs/GaAs(111)A界面のリアルタイム構造解析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"放射光その場X線回折によるInGaAs/InAs/GaAs(111)A界面のリアルタイム構造解析"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-03-17"},"publish_date":"2017-03-17","publish_status":"0","recid":"66182","relation_version_is_last":true,"title":["放射光その場X線回折によるInGaAs/InAs/GaAs(111)A界面のリアルタイム構造解析"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:51:50.681607+00:00"}