{"created":"2023-05-15T14:48:08.613338+00:00","id":65979,"links":{},"metadata":{"_buckets":{"deposit":"d0427e36-0268-4559-9559-fe273dcc4daf"},"_deposit":{"created_by":1,"id":"65979","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"65979"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00065979","sets":["10:29"]},"author_link":["649818","649820","649819","649821","649817","649816"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2016-12-01","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Si(110)清浄表面は規則的な一次元ナノ構造を有する16×2再構成構造を形成するため、ナノワイヤー等のテンプレート表面として注目されている。近年ではSi(111)表面のストレス測定からSi表面再構成と表面ストレスとの相関が明らかになりつつあり、さらなるSi(110)表面ストレスの精密測定には数mm2サイズにわたる広範囲の16×2構造形成が求められている。本研究は、Si(110)基板の表面化学処理により作製した水素終端層、及び酸化層の低温での通電加熱脱離により清浄表面を作製し、広範囲のSi(110)-16×2構造形成に最適な手法について検討した結果を報告するものである。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"2016 年真空・表面科学合同講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"鈴木, 翔太"}],"nameIdentifiers":[{"nameIdentifier":"649816","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"矢野, 雅大"}],"nameIdentifiers":[{"nameIdentifier":"649817","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"魚住, 雄輝"}],"nameIdentifiers":[{"nameIdentifier":"649818","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"朝岡, 秀人"}],"nameIdentifiers":[{"nameIdentifier":"649819","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山口, 憲司"}],"nameIdentifiers":[{"nameIdentifier":"649820","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山口 憲司","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"649821","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"低温酸化層脱離によるSi(110)-16×2構造の作製","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"低温酸化層脱離によるSi(110)-16×2構造の作製"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-09-29"},"publish_date":"2016-09-29","publish_status":"0","recid":"65979","relation_version_is_last":true,"title":["低温酸化層脱離によるSi(110)-16×2構造の作製"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:54:07.000181+00:00"}