{"created":"2023-05-15T14:42:58.335216+00:00","id":58877,"links":{},"metadata":{"_buckets":{"deposit":"eb0fa5f7-40ac-4c84-80be-f1c97597f712"},"_deposit":{"created_by":1,"id":"58877","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"58877"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00058877","sets":["11"]},"author_link":["586809","586811","586810","586812"],"item_10004_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-06","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"415","bibliographicPageStart":"409","bibliographicVolumeNumber":"87","bibliographic_titles":[{"bibliographic_title":"応用物理"}]}]},"item_10004_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"化合物半導体結晶成長の新たなその場測定手法として開発した放射光その場X線逆格子マッピングについて解説する．放射光その場X線逆格子マッピングは，結晶成長中の試料に放射光X線を照射し，試料からのX線回折の逆格子マッピングを高速測定することで，結晶格子の様子をリアルタイムで解析する手法である．放射光の特長である高輝度であることと，2次元のX線検出器を利用することで高速測定が実現され，原子層レベルの結晶成長ダイナミクスを捉えることが可能である．本稿ではGaN系およびGaAs系薄膜のひずみ変化を観測した結果を紹介する．また，3次元逆格子マッピングをその場測定することで，ひずみの面内異方性を明らかにした結果と，太陽電池を想定した多層構造に適用した結果を解説する．","subitem_description_type":"Abstract"}]},"item_10004_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"公益社団法人応用物理学会"}]},"item_10004_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0369-8009","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"586809","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"586810","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"586811","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"586812","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"放射光その場X線逆格子マッピングによる化合物半導体の結晶成長ダイナミクス","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"放射光その場X線逆格子マッピングによる化合物半導体の結晶成長ダイナミクス"}]},"item_type_id":"10004","owner":"1","path":["11"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-06-06"},"publish_date":"2018-06-06","publish_status":"0","recid":"58877","relation_version_is_last":true,"title":["放射光その場X線逆格子マッピングによる化合物半導体の結晶成長ダイナミクス"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T22:11:11.637061+00:00"}