{"created":"2023-05-15T14:39:59.693109+00:00","id":54885,"links":{},"metadata":{"_buckets":{"deposit":"50433e9a-e2f1-490f-b9a3-93491cdb985b"},"_deposit":{"created_by":1,"id":"54885","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"54885"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00054885","sets":["2"]},"author_link":["561226","561227","561230","561231","561228","561229","561224","561225"],"item_10003_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-10","bibliographicIssueDateType":"Issued"},"bibliographic_titles":[{"bibliographic_title":"Proceeding of The 20th International Symposium on High Voltage Engineering"}]}]},"item_10003_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"核融合プラズマ加熱用中性粒子入射装置（NBI）に使用される静電加速器の耐電圧向上のため、ビーム通過用孔を有する加速電極の真空耐電圧の発生機構を解明するものである。加速電極孔を模擬した小型電極を用い、孔周りの局所電界Eとその面積Sの積ESでが耐電圧に影響を与えることに着目したところ、ESの低減は暗電流の低減と耐電圧改善に影響を与えることを明らかにした。このESを低減するために、孔周りの面取り形状を変えた結果、暗電流を低減できる形状を同定し、加速器の耐電圧向上にも適用できることを明らかにした。","subitem_description_type":"Abstract"}]},"item_10003_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"CIGRE"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"大倉, 徹也"}],"nameIdentifiers":[{"nameIdentifier":"561224","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山納, 康"}],"nameIdentifiers":[{"nameIdentifier":"561225","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小島, 有志"}],"nameIdentifiers":[{"nameIdentifier":"561226","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"錦織, 良"}],"nameIdentifiers":[{"nameIdentifier":"561227","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"柏木, 美恵子"}],"nameIdentifiers":[{"nameIdentifier":"561228","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小島 有志","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"561229","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"錦織 良","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"561230","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"柏木 美恵子","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"561231","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"INVESTIGATION OF C-CHAMFERING AROUND APERTURE EDGE FOR HIGH VOLTAGE HOLDING PERFORMANCE IN SMALL ELECTRODES WITH MULTI-APERTURES IN VACUUM","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"INVESTIGATION OF C-CHAMFERING AROUND APERTURE EDGE FOR HIGH VOLTAGE HOLDING PERFORMANCE IN SMALL ELECTRODES WITH MULTI-APERTURES IN VACUUM"}]},"item_type_id":"10003","owner":"1","path":["2"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-04-16"},"publish_date":"2018-04-16","publish_status":"0","recid":"54885","relation_version_is_last":true,"title":["INVESTIGATION OF C-CHAMFERING AROUND APERTURE EDGE FOR HIGH VOLTAGE HOLDING PERFORMANCE IN SMALL ELECTRODES WITH MULTI-APERTURES IN VACUUM"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T22:55:39.601824+00:00"}