{"created":"2023-05-15T14:39:59.559284+00:00","id":54882,"links":{},"metadata":{"_buckets":{"deposit":"b4ef1da8-2511-4d9a-a958-8024206989c2"},"_deposit":{"created_by":1,"id":"54882","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"54882"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00054882","sets":["2"]},"author_link":["561199","561198","561200","561195","561196","561197"],"item_10003_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-05","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"011104","bibliographicVolumeNumber":"5","bibliographic_titles":[{"bibliographic_title":"JJAP Conference Proceedings"}]}]},"item_10003_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"　Si基板上に反応性蒸着エピタキシー法で初期層（テンプレート）を成長させ、その上に分子線エピタキシー法で高品位のβ-FeSi2薄膜をヘテロエピタキシャル成長させることが可能になっている。Si(111)基板上にエピタキシャル成長したβ-FeSi2(110)、(101)の結晶性を評価するために、Si<111>軸方向の原子列での軸に垂直な方向の原子変位をラザフォード後方散乱/チャネリング法により評価した。イオンの単一散乱のみを仮定した解析からは、原子変位はFe原子で0.11 nm、Si原子で0.095 nmとなり、非常に大きな値となった。薄膜内部でのイオンの多重散乱を考慮した結果、原子変位0.04 nmという値を得た。この値は、Si(111)面上で成長可能なβ-FeSi2(110)、(101)面の６つの等価ドメインの積層欠陥からなるモザイク構造のステップ高さ0.31 nmの1/6とほぼ一致する。この結果より、小角散乱の原因はモザイク構造のβ-FeSi2(110)、(101)面に不可避に成長 した積層欠陥であると推察できる。","subitem_description_type":"Abstract"}]},"item_10003_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.7567/JJAPCP.5.011104 ","subitem_relation_type_select":"DOI"}}]},"item_10003_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://journals.jsap.jp/jjapproceedings/online/5-011104"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://journals.jsap.jp/jjapproceedings/online/5-011104","subitem_relation_type_select":"URI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"淵, 雅也 (九工大)"}],"nameIdentifiers":[{"nameIdentifier":"561195","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"有馬, 幹尋 (九工大)"}],"nameIdentifiers":[{"nameIdentifier":"561196","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"鳴海, 一雅"}],"nameIdentifiers":[{"nameIdentifier":"561197","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"寺井, 慶和 (九工大)"}],"nameIdentifiers":[{"nameIdentifier":"561198","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"前田, 佳均 (九工大)"}],"nameIdentifiers":[{"nameIdentifier":"561199","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"鳴海 一雅","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"561200","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Ion Channeling Measurements of β-FeSi2 Films Epitaxially Grown on Si(111) and Their Analysis by Multiple Scattering Theory","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ion Channeling Measurements of β-FeSi2 Films Epitaxially Grown on Si(111) and Their Analysis by Multiple Scattering Theory"}]},"item_type_id":"10003","owner":"1","path":["2"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-04-15"},"publish_date":"2018-04-15","publish_status":"0","recid":"54882","relation_version_is_last":true,"title":["Ion Channeling Measurements of β-FeSi2 Films Epitaxially Grown on Si(111) and Their Analysis by Multiple Scattering Theory"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T22:55:41.737708+00:00"}