@inproceedings{oai:repo.qst.go.jp:00054794,
 author = {Toyokawa, H. and Saji, C. and Kawase, M. and Wu, S. and Furukawa, Y. and Kajiwara, K. and Sato, M. and Hirano, T. and Shiro, A. and Shobu, T. and Suenaga, A. and Ikeda, H. and 城 鮎美 and 菖蒲 敬久},
 book = {Journal of Instrumentation},
 month = {Jan},
 note = {We have been developing CdTe pixel detectors combined with a Schottky diode sensor and photon-counting ASICs. The hybrid pixel detector was designed with a pixel size of 200"μm by 200 μm and an area of 19 mm by 20 mm or 38.2 mm by 40.2 mm. The photon-counting ASIC, SP8-04F10K, has a preamplifier, a shaper, 3-level window-type discriminators and a 24-bits counter in each pixel. The single-chip detector with 100 by 95 pixels successfully operated with a photoncounting mode selectingX-ray energy with the windowcomparator and stable operationwas realized at 20 degrees C. We have performed a feasibility study for a white X-ray microbeam experiment. Laue diffraction patterns were measured during the scan of the irradiated position in a silicon steel sample. The grain boundaries were identified by using the differentials between adjacent images at each position.},
 title = {Development of CdTe pixel detectors combined with an aluminum Schottky diode sensor and photon-counting ASICs},
 volume = {12},
 year = {2017}
}