{"created":"2023-05-15T14:38:26.237828+00:00","id":49611,"links":{},"metadata":{"_buckets":{"deposit":"14e87c89-e4c0-4d09-a59c-b77ba86088ac"},"_deposit":{"created_by":1,"id":"49611","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49611"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049611","sets":["1"]},"author_link":["501178","501175","501179","501173","501174","501177","501180","501176"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-12","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"043506-8","bibliographicPageStart":"043506-1","bibliographicVolumeNumber":"17","bibliographic_titles":[{"bibliographic_title":"J. Micro/Nanolith. MEMS. MOEMS"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Extreme ultraviolet (EUV) lithography utilizes photons with 92 eV energy to ionize resists, generate secondary electrons, and enable electron driven reactions that produce acid in chemically amplified photoresists. Efficiently using the available photons is of key importance. To increase photon absorption, sensitizer molecules, containing highly absorbing elements, can be added to photoresist formulations. These sensitizers have gained growing attention in recent years, showing significant sensitivity improvement. Aside from an increasing absorption, adding metal salts into the resist formulation can induce other mechanisms, like higher secondary electron generation or acid yield, or modification of the dissolution rate that also can affect patterning performance. In this work, we used different sensitizers in chemically amplified resists. We measured experimentally the absorption of EUV light, the acid yield, the photoelectron emission, the dissolution rate, and the patterning performance of the resists. Addition of a sensitizer raised the acid yield even though a decrease in film absorbance occurred, suggesting an apparent increase in chemically resonant secondary electrons. While patterning results confirm a significant sensitivity improvement, it was at the cost of roughness degradation at higher sensitizer loading. This is hypothesized by the chemical distribution of the sensitizer in the resist combined with a modification of the dissolution contrast, as observed by dissolution rate monitor measurements. ","subitem_description_type":"Abstract"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1117/1.JMM.17.4.043506","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://doi.org/10.1117/1.JMM.17.4.043506"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1117/1.JMM.17.4.043506","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Vesters, Yannick"}],"nameIdentifiers":[{"nameIdentifier":"501173","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Jiang, Jing"}],"nameIdentifiers":[{"nameIdentifier":"501174","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山本, 洋揮"}],"nameIdentifiers":[{"nameIdentifier":"501175","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"De, Simone Danilo"}],"nameIdentifiers":[{"nameIdentifier":"501176","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kozawa, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"501177","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"De, Gendt Stefan"}],"nameIdentifiers":[{"nameIdentifier":"501178","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Vandenberghe, Geert"}],"nameIdentifiers":[{"nameIdentifier":"501179","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山本 洋揮","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"501180","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Sensitizers in extreme ultraviolet chemically amplified resist: mechanism of sensitivity improvement","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Sensitizers in extreme ultraviolet chemically amplified resist: mechanism of sensitivity improvement"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-02-12"},"publish_date":"2019-02-12","publish_status":"0","recid":"49611","relation_version_is_last":true,"title":["Sensitizers in extreme ultraviolet chemically amplified resist: mechanism of sensitivity improvement"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:18:59.539833+00:00"}