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Sensitizers in extreme ultraviolet chemically amplified resist: mechanism of sensitivity improvement
https://repo.qst.go.jp/records/49611
https://repo.qst.go.jp/records/49611c53cc229-7307-48c4-b4aa-79f72092740f
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-02-12 | |||||
| タイトル | ||||||
| タイトル | Sensitizers in extreme ultraviolet chemically amplified resist: mechanism of sensitivity improvement | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Vesters, Yannick
× Vesters, Yannick× Jiang, Jing× 山本, 洋揮× De, Simone Danilo× Kozawa, Takahiro× De, Gendt Stefan× Vandenberghe, Geert× 山本 洋揮 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Extreme ultraviolet (EUV) lithography utilizes photons with 92 eV energy to ionize resists, generate secondary electrons, and enable electron driven reactions that produce acid in chemically amplified photoresists. Efficiently using the available photons is of key importance. To increase photon absorption, sensitizer molecules, containing highly absorbing elements, can be added to photoresist formulations. These sensitizers have gained growing attention in recent years, showing significant sensitivity improvement. Aside from an increasing absorption, adding metal salts into the resist formulation can induce other mechanisms, like higher secondary electron generation or acid yield, or modification of the dissolution rate that also can affect patterning performance. In this work, we used different sensitizers in chemically amplified resists. We measured experimentally the absorption of EUV light, the acid yield, the photoelectron emission, the dissolution rate, and the patterning performance of the resists. Addition of a sensitizer raised the acid yield even though a decrease in film absorbance occurred, suggesting an apparent increase in chemically resonant secondary electrons. While patterning results confirm a significant sensitivity improvement, it was at the cost of roughness degradation at higher sensitizer loading. This is hypothesized by the chemical distribution of the sensitizer in the resist combined with a modification of the dissolution contrast, as observed by dissolution rate monitor measurements. | |||||
| 書誌情報 |
J. Micro/Nanolith. MEMS. MOEMS 巻 17, 号 4, p. 043506-1-043506-8, 発行日 2018-12 |
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| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1117/1.JMM.17.4.043506 | |||||
| 関連サイト | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1117/1.JMM.17.4.043506 | |||||
| 関連名称 | https://doi.org/10.1117/1.JMM.17.4.043506 | |||||
