{"created":"2023-05-15T14:38:17.564415+00:00","id":49413,"links":{},"metadata":{"_buckets":{"deposit":"65aae1f6-3ba2-4a12-b0c3-be9aaea72158"},"_deposit":{"created_by":1,"id":"49413","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49413"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049413","sets":["1"]},"author_link":["499093","499092","499089","499090","499088","499091"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-05","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"99","bibliographicPageStart":"90","bibliographicVolumeNumber":"154","bibliographic_titles":[{"bibliographic_title":"Acta Materialia"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"TEMその場観察法を用いて、イオン照射によるSiCナノチューブの微細組織変化について検討した結果、バルク材とは異なった結果を有したので報告する。室温照射では、SiCナノチューブは、バルク材同様にアモルファス化するが、それに必要な照射量はバルク材のそれと比べ3倍程と非常に大きく、SiCナノチューブが耐照射特性に非常に優れていることがわかった。また、700℃照射において、バルク材とは異なり、照射量の増加と共に結晶面間隔が減少したが、体積は増加するという通常では理解できない挙動を示すことを初めて明らかにした。これは、照射により、SiCナノチューブ内に残存していた残留応力を緩和させるために、大きな結晶粒から多くの小さな結晶粒に分割し、結晶面間隔は減少するため結晶自体の体積は減少するが、この小さな結晶粒子間が密度の小さなアモルファス状態になるため、全体として体積が増加するというメカニズムを明らかにした。","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":" Elsevier"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.actamat.2018.05.030","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://doi.org/10.1016/j.actamat.2018.05.030"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.actamat.2018.05.030","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"田口, 富嗣"}],"nameIdentifiers":[{"nameIdentifier":"499088","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山本, 春也"}],"nameIdentifiers":[{"nameIdentifier":"499089","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大場, 弘則"}],"nameIdentifiers":[{"nameIdentifier":"499090","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田口 富嗣","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"499091","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山本 春也","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"499092","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大場 弘則","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"499093","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ion irradiation-induced novel microstructural change in silicon carbide nanotubes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ion irradiation-induced novel microstructural change in silicon carbide nanotubes"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-01-09"},"publish_date":"2019-01-09","publish_status":"0","recid":"49413","relation_version_is_last":true,"title":["Ion irradiation-induced novel microstructural change in silicon carbide nanotubes"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:19:55.772881+00:00"}