{"created":"2023-05-15T14:38:08.931877+00:00","id":49222,"links":{},"metadata":{"_buckets":{"deposit":"98d4dbb9-9215-4fc5-9e11-fded120e4c40"},"_deposit":{"created_by":1,"id":"49222","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49222"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049222","sets":["1"]},"author_link":["723788","723784","723783","723782","723786","723787","723785","723781","723780"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8","bibliographicPageEnd":"1963","bibliographicPageStart":"1956","bibliographicVolumeNumber":"65","bibliographic_titles":[{"bibliographic_title":"IEEE TRANSACTIONS ON NUCLEAR SCIENCE"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"  The single-event damage observed in AlGaN/GaN\nhigh-electron mobility transistors (HEMTs) was investigated. For\npower control applications, normally off operation is achieved\nby p-type GaN gate material and its rated drain–source voltage\nof 600 V. Because of no gate insulator, single-event gate rupture\nis essentially excluded. Therefore, the HEMTs are expected to\nexhibit better immunity to heavy ions in comparison with SiC\npower MOSFETs. In the test results, two types of catastrophic\nfailure modes were observed with different leakage current paths;\none failure mode was caused by the introduction of a leakage\ncurrent path between the drain and Si substrate via the buffer\nlayer. The other was caused by the damage between the drain\nand source electrodes.","subitem_description_type":"Abstract"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1109/TNS.2018.2819990","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Mizuta, E."}],"nameIdentifiers":[{"nameIdentifier":"723780","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuboyama, S."}],"nameIdentifiers":[{"nameIdentifier":"723781","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakada, Y."}],"nameIdentifiers":[{"nameIdentifier":"723782","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, A."}],"nameIdentifiers":[{"nameIdentifier":"723783","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, T."}],"nameIdentifiers":[{"nameIdentifier":"723784","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Iwata, Y."}],"nameIdentifiers":[{"nameIdentifier":"723785","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Suzuki, K."}],"nameIdentifiers":[{"nameIdentifier":"723786","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山 昭憲","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"723787","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"723788","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-02-18"},"publish_date":"2019-02-18","publish_status":"0","recid":"49222","relation_version_is_last":true,"title":["Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:29:38.933091+00:00"}