@article{oai:repo.qst.go.jp:00049222,
 author = {Mizuta, E. and Kuboyama, S. and Nakada, Y. and Takeyama, A. and Ohshima, T. and Iwata, Y. and Suzuki, K. and 武山 昭憲 and 大島 武},
 issue = {8},
 journal = {IEEE TRANSACTIONS ON NUCLEAR SCIENCE},
 month = {Aug},
 note = {The single-event damage observed in AlGaN/GaN
high-electron mobility transistors (HEMTs) was investigated. For
power control applications, normally off operation is achieved
by p-type GaN gate material and its rated drain–source voltage
of 600 V. Because of no gate insulator, single-event gate rupture
is essentially excluded. Therefore, the HEMTs are expected to
exhibit better immunity to heavy ions in comparison with SiC
power MOSFETs. In the test results, two types of catastrophic
failure modes were observed with different leakage current paths;
one failure mode was caused by the introduction of a leakage
current path between the drain and Si substrate via the buffer
layer. The other was caused by the damage between the drain
and source electrodes.},
 pages = {1956--1963},
 title = {Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications},
 volume = {65},
 year = {2018}
}