@article{oai:repo.qst.go.jp:00049123,
 author = {Kurose, T. and Kuroki, S.-I. and Ishikawa, S. and Maeda, T. and Sezaki, H. and Makino, Takahiro and Ohshima, Takeshi and Östling, M. and Zetterling, C.-M. and 牧野 高紘 and 大島 武},
 journal = {Materials Science Forum},
 month = {Jun},
 note = {Low-parasitic-capacitance 4H-SiC nMOSFETs using a novel self-aligned process were demonstrated. In these nMOSFETs, device characteristics including parasitic capacitance (gate-source, gate-drain, drain-source capacitance) were investigated. As a result, low parasitic capacitance was achieved by the self-aligned structure.},
 pages = {971--974},
 title = {Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics},
 volume = {924},
 year = {2018}
}