@article{oai:repo.qst.go.jp:00048711,
 author = {Kraus, H. and Simin, D. and Kasper, C. and Suda, Y. and Kawabata, S. and Kada, W. and Honda, T. and Hijikata, Y. and Ohshima, Takeshi and Dyakonov, V. and 大島 武},
 journal = {Nano Letters},
 month = {Mar},
 note = {The controlled generation of quantum centers in silicon carbide (SiC) is realized by focused proton beam in a noncomplex manner without need for pre- or postirradiation treatment. The generation depth and resolution can be predicted by matching the proton energy to the material’s stopping power, and the amount of quantum centers at one specific sample volume is tunable from ensembles of millions to discernible single photon emitters. The generated centers were identified as silicon vacancies through their characteristic magnetic resonance
signatures and demonstrate that they possess a long spin−echo coherence time of 42 ±20 μs at room temperature.},
 title = {Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide},
 year = {2017}
}