{"created":"2023-05-15T14:37:45.136989+00:00","id":48704,"links":{},"metadata":{"_buckets":{"deposit":"80a0baca-5b69-41ef-b531-beda87ede68b"},"_deposit":{"created_by":1,"id":"48704","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"48704"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00048704","sets":["1"]},"author_link":["490050","490046","490051","490054","490044","490045","490055","490056","490049","490048","490052","490047","490053"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-02","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"672","bibliographicPageStart":"669","bibliographicVolumeNumber":"897","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. For logic gate with higher voltage swing, 4H-SiC pseudo-CMOS logic inverter with four nMOS was suggested and demonstrated, and a high voltage swing of 4.4 V was achieved at VDD=5 V. Simple nMOS inverters were also investigated. Both of pseudo-CMOS and nMOS inverters were operated at a high temperature of 200°C. For future SiC large integrated circuits, junction leakage current between n+ regions were also investigated with the comb-shaped test elements.","subitem_description_type":"Abstract"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.4028/www.scientific.net/MSF.897.669","subitem_relation_type_select":"DOI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0255-5476","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kuroki, Shin-ichiro"}],"nameIdentifiers":[{"nameIdentifier":"490044","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kurose, T."}],"nameIdentifiers":[{"nameIdentifier":"490045","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nagatsuma, H."}],"nameIdentifiers":[{"nameIdentifier":"490046","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ishikawa, S."}],"nameIdentifiers":[{"nameIdentifier":"490047","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Maeda, T."}],"nameIdentifiers":[{"nameIdentifier":"490048","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sezaki, H."}],"nameIdentifiers":[{"nameIdentifier":"490049","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kikkawa, T."}],"nameIdentifiers":[{"nameIdentifier":"490050","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, T."}],"nameIdentifiers":[{"nameIdentifier":"490051","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, T."}],"nameIdentifiers":[{"nameIdentifier":"490052","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ostling, M."}],"nameIdentifiers":[{"nameIdentifier":"490053","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zetterling, C.-M."}],"nameIdentifiers":[{"nameIdentifier":"490054","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"490055","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"490056","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-04-12"},"publish_date":"2018-04-12","publish_status":"0","recid":"48704","relation_version_is_last":true,"title":["4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:25:14.139449+00:00"}