{"created":"2023-05-15T14:37:12.576491+00:00","id":47969,"links":{},"metadata":{"_buckets":{"deposit":"4ef70b65-6349-4ac8-a6e4-afcd05bc1fe4"},"_deposit":{"created_by":1,"id":"47969","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"47969"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00047969","sets":["1"]},"author_link":["481556","481554","481558","481557","481552","481559","481553","481555"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-03","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"035303","bibliographicVolumeNumber":"6","bibliographic_titles":[{"bibliographic_title":"AIP Advances"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAs monolayers were deposited; the mean TW domain size was smaller for all film thicknesses.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.4943511","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://aip.scitation.org/doi/10.1063/1.4943511"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://aip.scitation.org/doi/10.1063/1.4943511","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2158-3226","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Suzuki, Hidetoshi"}],"nameIdentifiers":[{"nameIdentifier":"481552","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakata, Yuka"}],"nameIdentifiers":[{"nameIdentifier":"481553","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"481554","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ikeda, Kazuma"}],"nameIdentifiers":[{"nameIdentifier":"481555","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshita, Yoshio"}],"nameIdentifiers":[{"nameIdentifier":"481556","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Morohara, Osamu"}],"nameIdentifiers":[{"nameIdentifier":"481557","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Geka, Hirotaka"}],"nameIdentifiers":[{"nameIdentifier":"481558","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"481559","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-05-23"},"publish_date":"2017-05-23","publish_status":"0","recid":"47969","relation_version_is_last":true,"title":["Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:33:31.437398+00:00"}