{"created":"2023-05-15T14:37:11.140164+00:00","id":47936,"links":{},"metadata":{"_buckets":{"deposit":"5fbb4363-77a0-4a1f-9266-8b58bfd00de5"},"_deposit":{"created_by":1,"id":"47936","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"47936"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00047936","sets":["1"]},"author_link":["481252","481257","481253","481240","481247","481255","481245","481248","481258","481256","481259","481251","481244","481243","481250","481254","481249","481246","481242","481241"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-02","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"1600446-7","bibliographicPageStart":"1600446-1","bibliographicVolumeNumber":"214","bibliographic_titles":[{"bibliographic_title":"Phys. Status Solidi A"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Gamma-ray irradiation into vertical type n-channel hexagonal\n(4H)-silicon carbide (SiC) metal-oxide-semiconductor field\neffect transistors (MOSFETs) was performed under various\ngate biases. The threshold voltage for the MOSFETs irradiated\nwith a constant positive gate bias showed a large negative shift,\nand the shift slightly recovered above 100 kGy. For MOSFETs\nwith non- and a negative constant biases, no significant change\nin threshold voltage, Vth, was observed up to 400 kGy. By\nchanging the gate bias from positive bias to either negative or\nnon-bias, the Vth significantly recovered from the large\nnegative voltage shift induced by 50 kGy irradiation with\npositive gate bias after only 10 kGy irradiation with either\nnegative or zero bias. It indicates that the positive charges\ngenerated in the gate oxide near the oxide–SiC interface due to\nirradiation were removed or recombined instantly by the\nirradiation under zero or negative biases.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"WILEY"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1002/pssa.201600446","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"村田, 航一"}],"nameIdentifiers":[{"nameIdentifier":"481240","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"三友, 啓"}],"nameIdentifiers":[{"nameIdentifier":"481241","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"松田, 拓磨"}],"nameIdentifiers":[{"nameIdentifier":"481242","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"横関, 貴史"}],"nameIdentifiers":[{"nameIdentifier":"481243","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"481244","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小野田, 忍"}],"nameIdentifiers":[{"nameIdentifier":"481245","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"481246","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"481247","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大久保, 秀一"}],"nameIdentifiers":[{"nameIdentifier":"481248","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 雄季"}],"nameIdentifiers":[{"nameIdentifier":"481249","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"神取, 幹郎"}],"nameIdentifiers":[{"nameIdentifier":"481250","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"吉江, 徹"}],"nameIdentifiers":[{"nameIdentifier":"481251","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土方, 泰斗"}],"nameIdentifiers":[{"nameIdentifier":"481252","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"村田 航一","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"481253","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"三友 啓","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"481254","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"松田 拓磨","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"481255","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"481256","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小野田 忍","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"481257","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山 昭憲","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"481258","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"481259","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-05-02"},"publish_date":"2017-05-02","publish_status":"0","recid":"47936","relation_version_is_last":true,"title":["Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:33:52.302515+00:00"}