@article{oai:repo.qst.go.jp:00047936,
 author = {村田, 航一 and 三友, 啓 and 松田, 拓磨 and 横関, 貴史 and 牧野, 高紘 and 小野田, 忍 and 武山, 昭憲 and 大島, 武 and 大久保, 秀一 and 田中, 雄季 and 神取, 幹郎 and 吉江, 徹 and 土方, 泰斗 and 村田 航一 and 三友 啓 and 松田 拓磨 and 牧野 高紘 and 小野田 忍 and 武山 昭憲 and 大島 武},
 issue = {4},
 journal = {Phys. Status Solidi A},
 month = {Feb},
 note = {Gamma-ray irradiation into vertical type n-channel hexagonal
(4H)-silicon carbide (SiC) metal-oxide-semiconductor field
effect transistors (MOSFETs) was performed under various
gate biases. The threshold voltage for the MOSFETs irradiated
with a constant positive gate bias showed a large negative shift,
and the shift slightly recovered above 100 kGy. For MOSFETs
with non- and a negative constant biases, no significant change
in threshold voltage, Vth, was observed up to 400 kGy. By
changing the gate bias from positive bias to either negative or
non-bias, the Vth significantly recovered from the large
negative voltage shift induced by 50 kGy irradiation with
positive gate bias after only 10 kGy irradiation with either
negative or zero bias. It indicates that the positive charges
generated in the gate oxide near the oxide–SiC interface due to
irradiation were removed or recombined instantly by the
irradiation under zero or negative biases.},
 pages = {1600446-1--1600446-7},
 title = {Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs},
 volume = {214},
 year = {2017}
}