@article{oai:repo.qst.go.jp:00047878,
 author = {Imaizumi, M. and Nakamura, T. and Takamoto, T. and 大島, 武 and Tajima, M. and 大島 武},
 issue = {2},
 journal = {Prog. Photovolt. Res. Appl.},
 month = {Nov},
 note = {The radiation degradation of In0.5Ga0.5P, GaAs, In0.2Ga0.8As, and In0.3Ga0.7As single-junction solar cells, of which materials are also used as component subcells of inverted metamorphic triple-junction (IMM3J) solar cells, was studied. All four types of cells were fabricated using a simple device layout and irradiated with high-energy electrons and protons. The essential solar cell characteristics were obtained before and after irradiation, and the corresponding changes due to the irradiations were compared and analyzed. The degradation of the cell output parameters by electrons and protons were plotted as a function of the displacement damage dose. It was found that the radiation resistance of the two InGaAs cells is approximately equivalent to that of the InGaP and GaAs cells from the materials standpoint, which is a result of different initial material qualities. However, the InGaAs cells show relatively low radiation resistance to electrons especially for the short-circuit current. It was found that the greater decrease of minority-carrier diffusion length in InGaAs compared with InGaP and GaAs causes severe degradation in the photo-generation current of the InGaAs bottom subcells in IMM3J structures.},
 pages = {161--174},
 title = {Radiation degradation characteristics of component subcells in inverted metamorphic triple-junction solar cells irradiated with electrons and protons},
 volume = {25},
 year = {2016}
}