@article{oai:repo.qst.go.jp:00047738,
 author = {Kada, W. and Kambayashi, Y. and Ando, Yushi and Onoda, Shinobu and Umezawa, H. and Mokuno, Y. and Shikata, S. and Makino, Takahiro and Koka, M. and Hanaizumi, O. and Kamiya, Tomihiro and Oshima, Takeshi and 安藤 裕士 and 小野田 忍 and 牧野 高紘 and 神谷 富裕 and 大島 武},
 journal = {Nuclear Instruments and Methods in Physics Research B},
 month = {Jan},
 note = {To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particleinduced charge transient spectroscopy (QTS) techniques were performed using 5.5 MeV alpha particles and 9 MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition
(CVD) diamond, deep levels with activation energies of 0.35 eV and 0.43 eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels
in high-resistivity semiconductors.},
 pages = {151--155},
 title = {Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy},
 volume = {372},
 year = {2016}
}