{"created":"2023-05-15T14:37:02.232187+00:00","id":47732,"links":{},"metadata":{"_buckets":{"deposit":"5cd4d89a-81d9-47d8-bee4-6c9576232db7"},"_deposit":{"created_by":1,"id":"47732","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"47732"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00047732","sets":["1"]},"author_link":["478954","478951","478953","478955","478958","478956","478952","478950","478957"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"18","bibliographicPageEnd":"185702-8","bibliographicPageStart":"185702-1","bibliographicVolumeNumber":"119","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In order to expand the technology of III-V semiconductor devices with quantum structures to both terrestrial and space use, radiation induced defects as well as native defects generated in the quantum structures should be clarified. Electrically active defects in GaAs p+n diodes with embedded　ten layers of InAs quantum dots (QDs) are investigated using Deep Level Transient Fourier Spectroscopy. Both majority carrier (electron) and minority carrier (hole) traps are characterized. In the devices of this study, GaP layers are embedded in between the QD layers to offset the compressive stress introduced during growth of InAs QDs. Devices are irradiated with high energy protons for three different fluences at room temperature in order to characterize radiation induced defects. Seven majority electron traps and one minority hole trap are found after proton irradiation. It is shown that four electron traps induced by proton irradiation increase in proportion to the fluence, whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. These defects correspond to electron traps previously identified in GaAs. In addition, a 0.53 eV electron trap and a 0.14 eV hole trap are found in the QD layers before proton irradiation. It is shown that　these native traps are also unaffected by irradiation. The nature of the 0.14 eV hole trap is thought to be Ga-vacancies in the GaP strain balancing layers.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.4949476","subitem_relation_type_select":"DOI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"478950","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"J., Schmieder Kenneth"}],"nameIdentifiers":[{"nameIdentifier":"478951","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"M., Hubbard Seth"}],"nameIdentifiers":[{"nameIdentifier":"478952","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"V., Forbes David"}],"nameIdentifiers":[{"nameIdentifier":"478953","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"H., Warner Jeffrey"}],"nameIdentifiers":[{"nameIdentifier":"478954","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Oshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"478955","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"J., Walters Robert"}],"nameIdentifiers":[{"nameIdentifier":"478956","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤 真一郎","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"478957","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"478958","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-04-20"},"publish_date":"2017-04-20","publish_status":"0","recid":"47732","relation_version_is_last":true,"title":["Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:36:08.994317+00:00"}