{"created":"2023-05-15T14:36:56.113254+00:00","id":47594,"links":{},"metadata":{"_buckets":{"deposit":"f4420313-d899-481d-a685-b61f1222f12b"},"_deposit":{"created_by":1,"id":"47594","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"47594"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00047594","sets":["1"]},"author_link":["477057","477059","477056","477058"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8","bibliographicPageEnd":"085210-7","bibliographicPageStart":"085210-1","bibliographicVolumeNumber":"6","bibliographic_titles":[{"bibliographic_title":"AIP Advances"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"極端紫外線リソグラフィ(EUVL)は、近く半導体製造過程に導入される予定であるが、EUV露光装置は高額で出荷台数も少ないため、レジスト（パターニングに用いられる高分子材料）の基礎研究が十分にできる環境ではない。そのため、本論文では、電子線(EB)を用いてEUVレジストの感度を予測する方法を紹介した。EBとEUVによって誘起される放射線化学反応が同じであるならば、必要吸収線量はほぼ等しいであろうという仮定に基づき、EB感度からEUV感度を算出したところ、予測感度と実測感度がほぼ一致した。波長13.5 nmのEUVLのみならず、その次世代として想定されている波長6.x nmのbeyond-EUVL (BEUVL)の高感度レジスト・新露光プロセスの開発に向け、EBを使った基礎研究が可能であることが分かった。","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.4961378","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://scitation.aip.org/content/aip/journal/adva/6/8/10.1063/1.4961378"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://scitation.aip.org/content/aip/journal/adva/6/8/10.1063/1.4961378","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2158-3226","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"大山, 智子"}],"nameIdentifiers":[{"nameIdentifier":"477056","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島明博"}],"nameIdentifiers":[{"nameIdentifier":"477057","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田川精一"}],"nameIdentifiers":[{"nameIdentifier":"477058","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大山 智子","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"477059","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Estimation of resist sensitivity for extreme ultraviolet lithography using an electron beam","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Estimation of resist sensitivity for extreme ultraviolet lithography using an electron beam"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-12-19"},"publish_date":"2016-12-19","publish_status":"0","recid":"47594","relation_version_is_last":true,"title":["Estimation of resist sensitivity for extreme ultraviolet lithography using an electron beam"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:37:50.746256+00:00"}