| アイテムタイプ |
会議発表論文 / Conference Paper(1) |
| 公開日 |
2026-03-05 |
| タイトル |
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タイトル |
Electronic Testing of 4H-Silicon Carbide Schottky Barrier Diodes under High Temperature |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_5794 |
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資源タイプ |
conference paper |
| アクセス権 |
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アクセス権 |
metadata only access |
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アクセス権URI |
http://purl.org/coar/access_right/c_14cb |
| 著者 |
Daryl Giglio
Jarod Remy
Makino Takahiro
Cao Lei Raymond
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
This work characterized 4H-SiC Schottky Barrier Diodes (SBDs) for high-temperature applications, tested from room temperature to 600°C using a low-noise heated semiconductor probe station. The devices, with nitrogen doping at 1.7 × 1014 cm⁻³ and a 36 μm epitaxial layer, exhibited leakage currents ranging from 0.15 – 1.0 nA at room temperature to microampere levels at 600°C under -100V bias, remaining suitable for alpha spectroscopy with a depletion depth of approximately 25 μm. Consistent performance across multiple devices and reduced leakage after 600°C exposure suggest defect annealing. A reduction in leakage current was observed following measurements up to 600 °C, which may indicate the annealing of defects at elevated temperatures. Hysteresis measurements at elevated temperatures demonstrated a reduction in the loop difference as temperature increased. |
| 書誌情報 |
4H-SiC Schottky barrier diodes at pA level leakage current and performance evaluation up to 600°C
発行日 2025-09
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| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1117/12.3062442 |
