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内容記述 |
A V2 center in 4H-polytype silicon carbide (4H-SiC), a negatively-charged silicon vacancy at the quasi-cubic site, is a promising candidate for quantum information and quantum sensing applications due to its excellent spin coherence properties1. The electron spin of V2 centers can be electrically detected by the photo current detection of magnetic resonance (PDMR) technique2, which is important for realizing compact and integrated quantum devices.Recently, we have demonstrated single-spin PDMR detection on an individual single V2 center3. We found that there is room to further improve signal intensity by enhancing photo ionization of single defects3, but simultaneously minimizing the laser-induced background photo current is also essential for efficient readout. The excitation wavelength serves as a potential tuning parameter. To date, however, the wavelength dependence of photo ionization rate of single V2 center and the mechanism of background photo current generation remain unclear.In this study, we investigated the wavelength dependence of the photo ionization rate of a single V2 center as well as the background photo current. We evaluated the excitation wavelength dependence of the photo ionization rate and the signal-to-background ratio (SBR), which is defined as the ratio of the photo current from a single V2 center to background photo current under laser excitation. |
