| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2026-02-27 |
| タイトル |
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タイトル |
Detection of negative charge state luminescence from nitrogen vacancy centers under electron beam excitation: effects of extrinsic and intrinsic factors |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Jun Chen
Chikara Shinei
Junichi Inoue
Abe Hiroshi
Ohshima Takeshi
Masashi Miyakawa
Takashi Taniguchi
Takashi Sekiguchi
Tokuyuki Teraji
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Electrically driven optical emission from the negatively charged nitrogen-vacancy (NV−) centers is essential for the realization of diamond-based quantum devices. Attempts have been made to achieve electrical excitation using complex device structures and electric fields, but no clear success has been achieved. The zero-phonon line (ZPL) of NV− centers is rarely observed under electrical excitation. The absence of NV− ZPL under electrical excitation may be attributed to an increased ionization rate of the NV− centers due to high-energy electron/hole injection. To realize electrically driven NV− centers, it is crucial to understand and control the luminescence mechanism of NV− centers under high-energy electron/hole injection. Cathodoluminescence (CL) based on electron beam excitation can generate numerous electron-hole pairs, enabling rapid evaluation of NV− centers without requiring electric fields and device structures. In this study, we investigated the luminescence properties of NV− centers by investigating intrinsic materials factors (substitutional nitrogen concentration, negative and neutral NV centers concentrations) and extrinsic measurement conditions (temperature, excitation power, etc.) using the CL method. |
| 書誌情報 |
Diamond and Related Materials
巻 161,
p. 113071,
発行日 2026-01
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| 出版者 |
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出版者 |
ELSEVIER |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1016/j.diamond.2025.113071 |
