| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2026-02-27 |
| タイトル |
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タイトル |
Photoionization current spectroscopy of individual silicon vacancies in silicon carbide |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Kazuki Okajima
Tetsuri Nishikawa
Abe Hiroshi
Koichi Murata
Ohshima Takeshi
Hidekazu Tsuchida
Naoya Morioka
Norikazu Mizouchi
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Defect charge-state dynamics are central to both spin-photon interfaces and photoelectrical spin readout. Despite the significance of silicon vacancies (V1/V2) in silicon carbide (4H-SiC) for both applications, their ionization behavior has remained unclear because their lack of optical blinking prevents conventional charge-state analysis. Here, we employ photocurrent spectroscopy of individual defects to measure the wavelength dependence of their excitation and ionization cross-sections. We reveal that V1 and V2 exhibit similar ionization cross-sections that increase toward shorter wavelengths, while carbon vacancies dominate the more steeply increasing background photocurrent. These results indicate that V2 and its surrounding environment appear more robust than V1 under resonant excitation. We also identify wavelength regimes that optimize defect-origin photocurrent for photoelectrical spin readout relative to background contributions, which differ between single-defect and ensemble measurements. Our results establish photocurrent spectroscopy as a powerful complement to optical methods, advancing the development of defect-based quantum devices. |
| 書誌情報 |
arXiv
発行日 2025-11
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| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.48550/arXiv.2511.22449 |
