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Hybrid Quantum Sensing in 4H-SiC Enabled by the Integration of Vanadium and Silicon Vacancy for Simultaneous Temperature and Magnetic Field Detection
https://repo.qst.go.jp/records/2002856
https://repo.qst.go.jp/records/2002856b139a764-4426-4ff8-94dc-86138d2dee69
| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||||||||
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| 公開日 | 2026-03-02 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Hybrid Quantum Sensing in 4H-SiC Enabled by the Integration of Vanadium and Silicon Vacancy for Simultaneous Temperature and Magnetic Field Detection | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| 著者 |
Sato Shinichiro
× Sato Shinichiro
× Satoshi Asada
× Koichi Murata
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| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | Isolated vanadium (V) ions and silicon vacancies (VSi−) in 4H-SiC are promising candidates for quantum light sources and sensors owing to their stable near-infrared photon emission and optically addressable spin states. In this paper, we present a hybrid quantum sensing platform based on 4H-SiC incorporating both V and VSi− centers. We investigate the temperature dependence of photo- and electro-luminescence from V centers in 4H-SiC, and demonstrate an O-band light-emitting diode (LED) based on a V-doped 4H-SiC PiN structure, operating stably up to 523 K. Furthermore, we successfully fabricate 4H-SiC containing V and VSi− centers by employing high-energy electron irradiation. These centers are spectrally distinct, allowing ratiometric thermometry based on the emission intensity ratio between V and VSi− centers. This sensing scheme achieves high relative sensitivity (1.74 % K−1), high resolution (0.143 K Hz−1/2) and a broad operational range (79 K to 623 K), highlighting its practical applicability. Additionally, we demonstrate simultaneous detection of magnetic field and temperature by combining optically detected magnetic resonance of VSi− with the ratiometric thermometry. This simple and scalable sensing scheme highlights the potential of SiC as a multifunctional quantum material, enabling the integration of multiple optically addressable spin defects for advanced quantum technologies. | |||||||||||
| 書誌情報 |
Advanced Optical Materials 巻 0:e03749, p. 1-13, 発行日 2026-02 |
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| 出版者 | ||||||||||||
| 出版者 | Wiley | |||||||||||
