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内容記述 |
The single-photon source (SPS), a quantum device that can generate single photons on demand, is crucial for the development of quantum communication technologies. Isolated rare-earth (RE) ions in semiconductors, whose luminescence transition in the 4f-shell is inherently single photon emission, are a promising candidate for SPS operating at room temperature (RT) because of their stable photon emission with a narrow linewidth even at RT and their potential of electric control (i.e. electroluminescence: EL). In particular, GaN is the suitable host since RE ions do not show significant thermal quenching at RT due to its large bandgap (3.4 eV). Ion implantation technique is used to fabricateelectrically driven RE-SPS, ensuring precise RE ion positioning and quantity control. However, limited studies exist on EL characteristics of RE-doped GaN diodes fabricated by ion implantation, which is why this study was conducted. Here we show that Pr-doped GaN devices were successfully fabricated through crystal growth, ion implantation, annealing, regrowth, and device fabrication. A n--GaN layer was grown on a GaN substrate, followed by Pr ion implantation at 700 keV with a dose of 1×1014 cm−2. Ultra-high-pressure annealing at 1400 °C under 1 GPa N₂ was performed for 10 and 30 minutes, respectively, to regrow the p-GaN layer and form the p-n diode. |
