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Evaluation of radiation resistant SiC JFET operational amplifiers

https://repo.qst.go.jp/records/2002425
https://repo.qst.go.jp/records/2002425
811d01fa-8c0a-4747-8ba3-d27761e0bb36
アイテムタイプ 会議発表用資料 / Presentation(1)
公開日 2025-11-05
タイトル
タイトル Evaluation of radiation resistant SiC JFET operational amplifiers
言語 en
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6670
資源タイプ conference poster
著者 Ryuya Hirose

× Ryuya Hirose

Ryuya Hirose

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Mikihiro Yuzuriha

× Mikihiro Yuzuriha

Mikihiro Yuzuriha

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Masayuki Yamamoto

× Masayuki Yamamoto

Masayuki Yamamoto

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Hitoshi Umezawa

× Hitoshi Umezawa

Hitoshi Umezawa

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Takahide Sato

× Takahide Sato

Takahide Sato

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Takeharu Kuroiwa

× Takeharu Kuroiwa

Takeharu Kuroiwa

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Takeyama Akinori

× Takeyama Akinori

Takeyama Akinori

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Makino Takahiro

× Makino Takahiro

Makino Takahiro

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Ohshima Takeshi

× Ohshima Takeshi

Ohshima Takeshi

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Shin-Ichiro Kuroki

× Shin-Ichiro Kuroki

Shin-Ichiro Kuroki

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Yasunori Tanaka

× Yasunori Tanaka

Yasunori Tanaka

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抄録
内容記述 In recent years, research on silicon carbide (SiC) devices and integrated circuits intended for operation in harsh environments such as high-temperature and radiation-rich conditions has been actively conducted. In this study, the gain stage intended for use in an operational amplifier (op-amp) composed of SiC junction field effect transistors (JFETs) was operated while gamma-rays irradiation up to 1MGy, and changes in bode plot were evaluated. No degradation was observed in the frequency characteristics of the voltage gain and phase of the gain stage after irradiation. In addition, another SiC op-amp with a more practical design with a common-centroid JFET layout and two-layer interconnects was also fabricated. It operated as a non-inverting amplifier, though its bandwidth was limited.
会議概要(会議名, 開催地, 会期, 主催者等)
内容記述 International Workshop on Nanodevice Technologies 2025 (IWNT2025)
発表年月日
日付 2025-10-31
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