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内容記述 |
Silicon carbide metal-oxide-semiconductor field effect transistor (SiC MOSFET) is getting more attention and becoming potential candidate for harsh environment applications. However, high SiC/SiO2 interface trap densities are a critical issue to improve the device performance. Short channel MOSFET is one of solutions for improvement, whereas, it faces another problem called as short channel effects. In this work, for suppressing the short channel effects, LDD structure (lightly doped drain structure) was introduced in 4H-SiC MOSFETs. In this structure, lightly doped regions were introduced in the channel as an extension of source and drain in MOSFETs. Effects of the LDD structure in 4H-SiC n-MOSFET with different LDD lengths was investigated. For 4H-SiC n-channel MOSFET without LDD structure , the saturation behavior was not observed in drain current-drain voltage (ID−VD) characteristic. On the other hand, for the MOSFET with the LDD structure, drain currents were sufficiently saturated and ideal characteristics were obtained. |
