| アイテムタイプ |
会議発表用資料 / Presentation(1) |
| 公開日 |
2025-09-24 |
| タイトル |
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|
タイトル |
5 MGy Gamma-ray Radiation Effects on 4H-SiC Active Pixel Sensors |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6670 |
|
資源タイプ |
conference poster |
| 著者 |
T. Meguro
K. Hachimata
A. Takeyama
T. Ohshima
Y. Tanaka
K. Kojima
S-I. Kuroki
|
| 抄録 |
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内容記述 |
On the decommissioning of nuclear power plants, image sensors tolerent of gamma-rays irradiation more than 2 MGy have been strongly requested. Silicon carbide (SiC) has been known as a suitalble material for development radiation hardedend devices due to wide band gap energy, thus, 5 MGy gamma-ray radiation effects on SiC CMOS active pixel sensors were investigated. With increasing radiation dose, output voltage of the fabricated sensor after the reset action increases. This effect is thought to be caused by decrease in threshold voltage of SiC MOSFET as a reset transistor. Similarly, the output voltage swing decreased after gamma ray irradiation. This behavior indicates decrease in external quantum efficiency of photo diodes integrated in the sensor. |
| 会議概要（会議名, 開催地, 会期, 主催者等） |
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内容記述 |
The 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM 2025) |
| 発表年月日 |
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|
日付 |
2025-09-16 |
