| アイテムタイプ |
会議発表用資料 / Presentation(1) |
| 公開日 |
2025-09-24 |
| タイトル |
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|
タイトル |
4H-SiC CMOS 2-bit Decoder Circuits for Harsh Environment Applications |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
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|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6670 |
|
資源タイプ |
conference poster |
| 著者 |
S. Higashi
T. Meguro
T. Maeda
H. Sezaki
A. Takeyama
T. Ohshima
K. Kojima
Y. Tanaka
S-I. Kuroki
|
| 抄録 |
|
|
内容記述 |
Owing to wide band gap, silicon carbide (SiC) have been drawn attention as a semiconductor for fabrication of electronic devices with higher breakdown field strength and thermal conductivity. Such material properties are also preferable for development of electric circuits appliable to high temperature and radiation conditions. CMOS decoder circuit is an elementary logic circuit, hence in this work, a 2-bit decoder which is a type of CMOS logic circuit that consists of six SiC inverters and four NANDs were fabricated. Measurements of timing diagram of the 2-bit decoder of the fabricated CMOS logic circuit were performed at a supply voltage of 16 V and input signal voltage of 16 V. Observed output signals show correct logical values, indicating fabricated SiC decoder worked well. |
| 会議概要（会議名, 開催地, 会期, 主催者等） |
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内容記述 |
The 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM 2025) |
| 発表年月日 |
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|
日付 |
2025-09-18 |
