| アイテムタイプ |
会議発表用資料 / Presentation(1) |
| 公開日 |
2025-09-24 |
| タイトル |
|
|
タイトル |
High temperature operating characteristics of 4H-SiC Active Pixel Sensors |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6670 |
|
資源タイプ |
conference poster |
| 著者 |
Y. Hata
T. Meguro
A. Takeyama
T. Ohshima
K. Kojima
Y. Tanaka
S.-I Kuroki
|
| 抄録 |
|
|
内容記述 |
Silicon carbide (SiC) photo diodes (PDs) and active pixel sensors (APSs) were fabricated and their characteristics were investigated raising temperature from 50 to 500 degrees. Quantum efficiency (QE) of PDs was measured in the wavelength range from 200 nm to 550 nm. Output voltage of the APS was measured under dark and under UV irradiation at 250 nm. Successful operation of SiC PD and APS even at 500 degrees was demonstrated, additionally, output waveforms of the APS increased with increasing temperature. It indicates increase in the gain of SiC MOSFET as the source follower amplifier. Increased absorption of the band edge wavelength attributes to incresed output voltage. |
| 会議概要（会議名, 開催地, 会期, 主催者等） |
|
|
内容記述 |
The 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM 2025) |
| 発表年月日 |
|
|
日付 |
2025-09-17 |
