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内容記述 |
A research and development study is in progress on ultrahigh-precision single-ion irradiation/implantation techniques at QST Takasaki Institute. To achieve this, we use a linear quadrupole trap as an ultracold single-ion source with a laser cooler, considering its controllability of single ions and nanobeam formation using a Coulomb crystal. If ultracold ions, aligned along the trap axis, can be extracted one by one from the trap without serious heating, then accelerated and focused properly, the transverse extent of the ions can be shrunk down to a nanometer scale. Note that, for implantation with different ion species (such as N and Si), the implantation ions is sympathetically cooled via Coulomb collisions with directly laser-cooled Ca+ ions. Detailed multiparticle tracking simulations have been performed for the physical design of the system. The present results show that ultracold single N or Si ions can be extracted selectively from the trap and then focused below 10 nm at 50 ~ 100 keV. In the presentation, we will show the simulation results on the nanobeam formation scheme and the development status of the single-ion implantation system at QST Takasaki. |