| アイテムタイプ |
会議発表用資料 / Presentation(1) |
| 公開日 |
2026-01-07 |
| タイトル |
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|
タイトル |
Coordination geometry of praseodymium ions implanted in gallium nitride and its sensing applications |
|
言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6670 |
|
資源タイプ |
conference poster |
| 著者 |
Sato Shinichiro
Yokozuka Eri
Entani Shiro
Nagasawa Naotsugu
Saito Hiroyuki
Takuya Tsuji
Daiju Matsumura
Shin Ito
Manato Deki
Yoshio Honda
Hiroshi Amano
Shugo Nitta
Michał Boćkowski
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| 抄録 |
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内容記述 |
Isolated praseodymium (Pr) ions in gallium nitride (GaN) can be used as quantum sensors, which can sense the physical quantities such as temperature with nanoscale spatial resolution. Although ion implantation and post thermal annealing are used to fabricate Pr-doped GaN quantum sensors, the electronic state of the implanted Pr ions has not been clarified and the detailed understanding of the optical activation mechanism is still lacking. In this study, the electronic states and local atomic structures of Pr implanted in GaN are analyzed by X-ray absorption fine structure (XAFS) measurement on SPring-8 BL14B1. It is found that the charge state of the implanted Pr ions is +3 and the improved symmetry of the local structure around the implanted Pr ions due to post thermal annealing enhances the photon emission from the implanted Pr ions. |
| 会議概要（会議名, 開催地, 会期, 主催者等） |
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内容記述 |
International Conference on Materials and Systems for Sustainability 2025 (ICMaSS2025) |
| 発表年月日 |
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|
日付 |
2025-12-13 |
