| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2025-08-20 |
| タイトル |
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タイトル |
Cross-section Prediction Method for Proton Direct Ionization Induced Single Event Upset |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
K. Takeuchi
K. Sakamoto
Y. Tsuchiya
T. Kato
R. Nakamura
Takeyama Akinori
Makino Takahiro
Ohshima Takeshi
M. Hashimoto
H. Shindo
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
This paper proposes a method for predicting the cross section (XS) of single event upset (SEU) induced by proton direct ionization (PDI). The method is based on the physics-based model previously proposed for both bulk FinFET static random access memories (SRAMs) and planar SRAMs under heavy ion irradiation. The method presented in this paper predicts PDI XS for both 16-nm FinFET and 40-nm planar SRAMs below a few MeV regime, thanks to the broad predictability of our XS model in linear energy transfer (LET) dependence. By calibrating the parameters through heavy ion irradiation, our method enables the prediction of PDI SEU XS in SRAMs, which has not been analytically addressed in previous studies, and its validity has been verified. |
| 書誌情報 |
IEEE Transactions on Nuclear Science
巻 72,
号 8,
p. 2735-2742,
発行日 2025-08
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| 出版者 |
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出版者 |
IEEE |
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
1558-1578 |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1109/TNS.2025.3568455 |
