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  1. 原著論文

Liquid Crystalline [1]Benzothieno[3,2-b][1]benzothiophene Semiconductors with Unsymmetrical Thiomethylphenyl Substitution: Synthesis and Charge Transport

https://repo.qst.go.jp/records/2001678
https://repo.qst.go.jp/records/2001678
ea8e8469-7ce8-43b4-9667-d6bb502ed609
アイテムタイプ 学術雑誌論文 / Journal Article(1)
公開日 2025-07-11
タイトル
タイトル Liquid Crystalline [1]Benzothieno[3,2-b][1]benzothiophene Semiconductors with Unsymmetrical Thiomethylphenyl Substitution: Synthesis and Charge Transport
言語 en
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
著者 Meenal Kataria

× Meenal Kataria

Meenal Kataria

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Choi Wookjin

× Choi Wookjin

Choi Wookjin

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Yusuke Tsutsui

× Yusuke Tsutsui

Yusuke Tsutsui

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Rajendra Prasad Paitandi

× Rajendra Prasad Paitandi

Rajendra Prasad Paitandi

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Nobuoka Masaki

× Nobuoka Masaki

Nobuoka Masaki

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Yoshiya Omori

× Yoshiya Omori

Yoshiya Omori

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Sakurai Tsuneaki

× Sakurai Tsuneaki

Sakurai Tsuneaki

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Seki Syuhei

× Seki Syuhei

Seki Syuhei

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内容記述タイプ Abstract
内容記述 An unsymmetrical [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivative functionalized with a (4-thiomethyl)phenyl group, designed as a liquid crystalline organic semiconductor (LC-OSC), is presented. This derivative is an example of having a smectic E (SmE) liquid crystal (LC) phase in the BTBT family, forming LC semiconducting material. Phase characterization by powder X-ray diffraction (PXRD), grazing incidence wide-angle X-ray scattering (GIWAXS), and polarized optical microscopy (POM) confirms the formation of an ordered smectic E (SmE) phase at a high temperature. This two-dimensional ordered molecular packing is preserved in both bulk crystals and vapor-deposited thin films, which is promising for excellent charge transport properties. The material demonstrates high photoconductivity, reaching ?∑μmax = 1.6 × 10?3 cm2 V?1 s?1 (FP-TRMC), and the local hole mobility was estimated to be as high as 9.3 cm2 V?1 s?1 (FI-TRMC) at the semiconductor?insulator interface after thermal annealing at the SmE phase. Moreover, it has been found that thermal annealing in the SmE phase enhances hole mobility by preserving the ordered LC structure, whereas annealing in the smectic A or isotropic phases at higher temperatures disrupts conductive pathways due to thermal stress at the semiconductor?insulator interface. Thus, interfacial engineering at the ordered LC phase enhances conductivity, rendering thiomethyl-functionalized BTBT with improved electronic properties and thin film stability for next-generation LC semiconductors.
書誌情報 Langmuir

巻 41, 号 22, p. 14325-14332, 発行日 2025-05
DOI
識別子タイプ DOI
関連識別子 10.1021/acs.langmuir.5c01393
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