| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2025-03-03 |
| タイトル |
|
|
タイトル |
Annealing Time Dependence on Creation of SiV, GeV, andSnV in Diamond by Atmospheric Annealing at 1800 °C |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 著者 |
Baba Tomoya
Iizawa Masatomi
Takenaka Kouta
Kimura Kosuke
A. Kawasaki
T. Taniguchi
M. Miyakawa
H. Okazaki
O. Hanaizumi
Onoda Shinobu
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
The creation of SiV?, GeV?, and SnV? are presented by the atmospheric annealing in the argon flow. Compared to high-pressure annealing, in which gas cannot flow, atmospheric annealing with an inert gas flow not only causes less degradation of the sample surface but also has the advantage of reducing equipment cost and preparation time. Excessive annealing time has been shown to reduce the amount of centers created. The optimal annealing time that maximizes formations depends on the type of diamond sample and the implanted ions. Furthermore, inspired by the split-vacancy structure of the group IV?V centers, atmospheric pre-annealing at 600?°C to increase the amount of di-vacancy is demonstrated, followed by annealing at 1800?°C for 1?min. A shorter duration of high-temperature annealing is expected to qualitatively reduce stress and deterioration of the crystallinity of the diamond sample. |
| 書誌情報 |
physica status solidi a（pss-a）
p. 2400303-1-2400303-8,
発行日 2024-09
|
| 出版者 |
|
|
出版者 |
Wiley |
| DOI |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1002/pssa.202400303 |
