| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-05-17 |
| タイトル |
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タイトル |
Negative longitudinal resistance of monolayer graphene in the quantum Hall regime |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Kaverzin Alexey
Daimon Shunsuke
Kikkawa Takashi
Ohtsuki Tomi
Saitoh Eiji
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
In the quantum Hall regime the charge current is carried by ideal one-dimensional edge channels where the backscattering is prohibited by topology. This results in the constant potential along the edge of the Hall bar leading to zero 4-terminal longitudinal resistance rxx. Finite scattering between the counter-propagating edge states, when the topological protection is broken, commonly results in rxx > 0. However, a local disorder, if allowing intersection of the edge states, can result in a counter-intuitive scenario when rxx < 0. In this work we report the observation and a systematic study of such unconventional negative longitudinal resistance seen in an encapsulated monolayer graphene Hall bar device measured in the quantum Hall regime. We supplement our findings with the numerical calculations which allow us to outline the conditions necessary for the appearance of negative rxx and to exclude the macroscopic disorder (contamination bubble) as the main origin of it. |
| 書誌情報 |
Applied Physics Letters
巻 124,
p. 203103,
発行日 2024-05
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| 出版者 |
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出版者 |
AIP Publishing |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1063/5.0207235 |