| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-09-06 |
| タイトル |
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タイトル |
Enhancing Room-temperature Photoluminescence from Erbium-doped Silicon by Fabricating Nanopillars in a Silicon-on-Insulator Layer |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Yuma Takahashi
Tomoki Ishii
Kaisei Uchida
Takumi Zushi
Lindsay Coe
Sato Shinichiro
Enrico Prati
Takahiro Shinada
Takashi Tanii
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
To enhance the photoluminescence (PL) from erbium-doped silicon, nanopillars were fabricated in a silicon-on-insulator (SOI) layer with erbium and oxygen. Photoluminescence measurements at room temperature demonstrated that a nanopillar with the diameter of 1435 nm exhibits the highest near-infrared PL from erbium atoms, which is 2.0 times higher than that from an unstructured erbium-doped SOI layer. Optical simulations revealed that the PL enhancement is mainly due to the resonance absorption of excitation light at the wavelength of 785 nm. The results show the potential of nanostructure fabrication for enhancing the near-infrared PL intensity. |
| 書誌情報 |
e-Journal of Surface Science and Nanotechnology
巻 21,
号 4,
p. 262-266,
発行日 2023-05
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| 出版者 |
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出版者 |
The Japan Society of Vacuum and Surface Science |
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
1348-0391 |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1380/ejssnt.2023-041 |
