| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2023-06-28 |
| タイトル |
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タイトル |
Mechanism of improved crystallinity by defect-modification in proton-irradiated GaAsPN photovoltaics: Experimental and first-principle calculations approach |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Keisuke Yamane
Yuito Maki
Shun One
Akihiro Wakahara
Emil-Mihai Pavelescu
Ohshima Takeshi
Tetsuya Nakamura
Mitsuru Imaizumi
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
This study presents a new model for point-defect modification in III-V-N alloys through first-principle calculations and several validation experiments conducted in our previous study, which explain the enhanced crystallinity of III-V-N alloys caused by proton irradiation and rapid thermal annealing (RTA). Validation experiments clarified that the conversion efficiency of the GaAsPN solar cell increased after proton irradiation followed by RTA, whereas that of the GaP solar cell decreased after the same process. Thus, the improved crystallinity of
the GaAsPN alloy by this process is attributed to the decrease in nitrogen-related point defects in the crystal. The detailed annihilation mechanism of the nitrogen-related point defect was then studied using first-principle calculations demonstrating that the representative nitrogen-related point defects can change to a lower-energy state when a vacancy forms at its neighboring group V site, leading to the annihilation of the defects. It was concluded that vacancies created by proton irradiation enhance the annihilation of nitrogen-related point
defects. |
| 書誌情報 |
Journal of Applied Physics
巻 132,
号 6,
p. 065701-1-065701-6,
発行日 2022-08
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| 出版者 |
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出版者 |
AIP Publishing |
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
0021-8979 |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1063/5.0096345 |
