| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2023-06-28 |
| タイトル |
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タイトル |
Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Tatsuya Meguro
Takeyama Akinori
Ohshima Takeshi
Yasunori Tanaka
Shin-Ichiro Kuroki
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
For radiation hardened image sensors, a Silicon-On-Insulator (SOI) -Si/ 4H-SiC hybrid pixel device was developed. The hybrid pixel device consists of one Si photodiode and three 4H-SiC nMOSFETs. At fabrication, SOI substrate was directly bonded on 4H-SiC substrate via SiO2. After bonding, the base silicon substrate and Buried Oxide (BOX) were removed by TMAH wet-etching. By using this SOI-Si/ 4H-SiC substrate, the SOI-Si photodiodes and 4H-SiC n MOSFETs were integrated in the same substrate. As a result, a response of the SOI-Si/ 4H-SiC hybrid pixel device to light illumination was successfully demonstrated. |
| 書誌情報 |
IEEE Electron Device Letters
巻 43,
号 10,
p. 1713-1716,
発行日 2022-08
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| 出版者 |
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出版者 |
IEEE |
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
0741-3106 |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1109/LED.2022.3200124 |
