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Ion tracks in silicon formed by much lower energy deposition than the track formation threshold
https://repo.qst.go.jp/records/81667
https://repo.qst.go.jp/records/81667cc46e2f0-7cd6-4480-ba65-30f463ce72c3
Item type | 学術雑誌論文 / Journal Article(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2020-12-15 | |||||
タイトル | ||||||
タイトル | Ion tracks in silicon formed by much lower energy deposition than the track formation threshold | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Amekra, H.
× Amekra, H.× Toulemonde, M.× Narumi, Kazumasa× Li, R.× Chiba, Atsuya× Hirano, Yoshimi× Yamada, Keisuke× Yamamoto, Shunya× Ishikawa, N.× Okubo, N.× Saitoh, Yuichi× Kazumasa, Narumi× Atsuya, Chiba× Yoshimi, Hirano× Keisuke, Yamada× Shunya, Yamamoto× Yuuichi, Saito |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | 電子的阻止能が大きな高エネルギーイオンを標的に照射したときにその飛跡に沿ってダメージによるイオントラックが形成されることが知られているが、炭素原子60個からなるC_60クラスターイオンの場合、これまで17MeV以下ではSi中にトラックが形成されないと考えられていた。今回、照射実験により1MeVのC_60照射でもSi中にトラックが形成されることを確認した。これはこれまでの電子的阻止能のエネルギー付与のみによる形成メカニズムでは説明することができず、新たに核的阻止能を加えたシナジー効果を示唆するものである。 | |||||
書誌情報 |
Scientific Reports 巻 11, p. 185, 発行日 2021-01 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 2045-2322 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1038/s41598-020-80360-8 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://www.nature.com/articles/s41598-020-80360-8 |