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STUDY ON IRRADIATION EFFECTS BY FEMTOSECOND-PULSED EXTREME ULTRAVIOLET IN MAIN-CHAIN SCISSION RESIST
https://repo.qst.go.jp/records/81103
https://repo.qst.go.jp/records/81103a1ebe61b-d051-4d0b-b774-396cd888cf2e
Item type | 会議発表用資料 / Presentation(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2020-10-21 | |||||
タイトル | ||||||
タイトル | STUDY ON IRRADIATION EFFECTS BY FEMTOSECOND-PULSED EXTREME ULTRAVIOLET IN MAIN-CHAIN SCISSION RESIST | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
資源タイプ | conference object | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Hosaka, Yuji
× Hosaka, Yuji× Yamamoto, Hiroki× Ishino, Masahiko× Dinh, Thanhhung× Nishikino, Masaharu× Maekawa, Yasunari× Yuji, Hosaka× Hiroki, Yamamoto× Masahiko, Ishino× Dinh, Thanhhung× Masaharu, Nishikino× Yasunari, Maekawa |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Femtosecond-pulsed extreme ultraviolet (EUV) of free-electron laser (FEL) is the most potential candidates for a next-generation EUV lithography light source. However, the physical events and chemical reactions in resist materials, induced by EUV with a short pulse width and high power intensity, have not yet been elucidated. In our previous study, the morphological and chemical changes in poly(methyl methacrylate) (PMMA) induced by picosecond-pulsed EUV were investigated using an X-ray laser. The sensitivity of PMMA upon exposure to a 7 ps EUV pulse was much enhanced in comparison with that using conventional EUV sources, which have a typical pulse width of the order of nanoseconds. In this study, the sensitivity of PMMA upon exposure to femtosecond-pulsed EUV was investigated by using FEL to obtain the resist design for next-generation EUV lithography. | |||||
会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | 33rd International Microprocesses and Nanotechnology Conference (MNC 2020) | |||||
発表年月日 | ||||||
日付 | 2020-11-09 | |||||
日付タイプ | Issued |