WEKO3
アイテム
{"_buckets": {"deposit": "83dbde47-c9ca-49de-af8c-0cc2b3ca796b"}, "_deposit": {"created_by": 1, "id": "76555", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "76555"}, "status": "published"}, "_oai": {"id": "oai:repo.qst.go.jp:00076555", "sets": ["2"]}, "author_link": ["849066", "849068", "849061", "849065", "849063", "849067", "849069", "849060", "849062", "849070", "849064"], "item_10003_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2019-07", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "840", "bibliographicPageStart": "837", "bibliographicVolumeNumber": "963", "bibliographic_titles": [{"bibliographic_title": "Materials Science Forum"}]}]}, "item_10003_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Low-parasitic-capacitance 4H-SiC pMOSFETs were demonstrated for high-frequency CMOS inverters. In these pMOSFETs, device characteristics including parasitic capacitances were investigated and low parasitic capacitance was achieved by the trench gate structure.", "subitem_description_type": "Abstract"}]}, "item_10003_relation_14": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.4028/www.scientific.net/MSF.963.837", "subitem_relation_type_select": "DOI"}}]}, "item_10003_relation_17": {"attribute_name": "関連サイト", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "https://www.scientific.net/MSF.963.837", "subitem_relation_type_select": "URI"}}]}, "item_10003_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1662-9752", "subitem_source_identifier_type": "ISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Inoue, J."}], "nameIdentifiers": [{"nameIdentifier": "849060", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "S.-I., Kuroki"}], "nameIdentifiers": [{"nameIdentifier": "849061", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ishikawa, S."}], "nameIdentifiers": [{"nameIdentifier": "849062", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Maeda, T."}], "nameIdentifiers": [{"nameIdentifier": "849063", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sezaki, H."}], "nameIdentifiers": [{"nameIdentifier": "849064", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Makino, Takahiro"}], "nameIdentifiers": [{"nameIdentifier": "849065", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohshima, Takeshi"}], "nameIdentifiers": [{"nameIdentifier": "849066", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "M., Östling"}], "nameIdentifiers": [{"nameIdentifier": "849067", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "C.-M., Zetterling"}], "nameIdentifiers": [{"nameIdentifier": "849068", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Makino, Takahiro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "849069", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohshima, Takeshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "849070", "nameIdentifierScheme": "WEKO"}]}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "conference paper", "resourceuri": "http://purl.org/coar/resource_type/c_5794"}]}, "item_title": "4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters"}]}, "item_type_id": "10003", "owner": "1", "path": ["2"], "permalink_uri": "https://repo.qst.go.jp/records/76555", "pubdate": {"attribute_name": "公開日", "attribute_value": "2019-08-23"}, "publish_date": "2019-08-23", "publish_status": "0", "recid": "76555", "relation": {}, "relation_version_is_last": true, "title": ["4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters"], "weko_shared_id": -1}
4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters
https://repo.qst.go.jp/records/76555
https://repo.qst.go.jp/records/765559d00bab2-093f-4e82-8bc5-0f78afbbd317
Item type | 会議発表論文 / Conference Paper(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2019-08-23 | |||||
タイトル | ||||||
タイトル | 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Inoue, J.
× Inoue, J.× S.-I., Kuroki× Ishikawa, S.× Maeda, T.× Sezaki, H.× Makino, Takahiro× Ohshima, Takeshi× M., Östling× C.-M., Zetterling× Makino, Takahiro× Ohshima, Takeshi |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Low-parasitic-capacitance 4H-SiC pMOSFETs were demonstrated for high-frequency CMOS inverters. In these pMOSFETs, device characteristics including parasitic capacitances were investigated and low parasitic capacitance was achieved by the trench gate structure. | |||||
書誌情報 |
Materials Science Forum 巻 963, p. 837-840, 発行日 2019-07 |
|||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1662-9752 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.4028/www.scientific.net/MSF.963.837 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://www.scientific.net/MSF.963.837 |