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Synthesis and formation mechanism of novel double-thick-walled silicon carbide nanotubes from multiwalled carbon nanotubes
https://repo.qst.go.jp/records/82110
https://repo.qst.go.jp/records/821106ad5e969-d965-410f-8bd4-9388dceadbe4
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2021-01-27 | |||||
タイトル | ||||||
タイトル | Synthesis and formation mechanism of novel double-thick-walled silicon carbide nanotubes from multiwalled carbon nanotubes | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Tomitsugu, Taguchi
× Tomitsugu, Taguchi× Shunya, Yamamoto× Hironori, Oba× Tomitsugu, Taguchi× Shunya, Yamamoto× Hironori, Oba |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | In this study, double-thick-walled (DTW) silicon carbide (SiC) nanotubes, the walls of which comprise connected disordered polycrystalline nanograins, were successfully synthesized for the first time via the reaction of multiwalled carbon nanotubes (MWCNTs) with Si powder. DTW SiC nanotubes exhibit novel properties unlike other SiC nanomaterials, owing to their intriguing geometries. The DTW SiC nanotubes had a wall thickness exceeding 20 nm, regardless of the external diameter, as indicated by transmission electron microscopy results. The DTW SiC nanotubes with a spacing of above 30 nm between the outer and inner nanotubes exhibited perfect double-walled structures. The inner and outer nanotubes were not connected in any region. When all the carbon was transformed into SiC, the volume of carbon increased to 2.2 times the initial value. These results reveal that DTW SiC nanotubes with perfect structures cannot be synthesized without an MWCNT wall thickness of at least 50 nm. Several types of DTW SiC nanotubes with different morphologies, such as diameter, end structure, and distance between the inner and outer nanotubes, were synthesized. The morphology of DTW SiC nanotubes can be controlled by changing the wall thickness and/or diameter of the original MWCNTs and the reaction conditions. | |||||
書誌情報 |
Applied Surface Science 巻 551, p. 149421, 発行日 2021-03 |
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出版者 | ||||||
出版者 | ELSEVIER | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0169-4332 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.apsusc.2021.149421 | |||||
関連サイト | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.apsusc.2021.149421 |