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Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control
https://repo.qst.go.jp/records/80279
https://repo.qst.go.jp/records/802797759c846-289c-4c54-af0e-4379ef1e4440
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-08-04 | |||||
タイトル | ||||||
タイトル | Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
L. Crook, Alexander
× L. Crook, Alexander× P. Anderson, Christopher× C. Miao, Kevin× Bourassa, Alexandre× Lee, Hope× L. Bayliss, Sam× O. Bracher, David× Zhang, Xingyu× Abe, Hiroshi× Ohshima, Takeshi× L. Hu, Evelyn× David, D. Awschalom*× Abe, Hiroshi× Ohshima, Takeshi |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5000. Subsequent coupling to a single divacancy leads to a Purcell factor of ∼50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground-state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance toward scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits. | |||||
書誌情報 |
Nano Letters 巻 20, 号 5, p. 3427-3434, 発行日 2020-08 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1530-6984 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1021/acs.nanolett.0c00339 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://pubs.acs.org/doi/10.1021/acs.nanolett.0c00339 |