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Synthesis and Property of Tannic Acid Derivatives and Their Application for Extreme Ultraviolet Lithography System
https://repo.qst.go.jp/records/49610
https://repo.qst.go.jp/records/49610be4acd2d-7d15-41ae-ba07-6382fe90fba4
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2019-02-12 | |||||
タイトル | ||||||
タイトル | Synthesis and Property of Tannic Acid Derivatives and Their Application for Extreme Ultraviolet Lithography System | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Kudo, Hiroto
× Kudo, Hiroto× Shizuya, Ohori× Ogawa, Hiroki× 山本, 洋揮× Kozawa, Takahiro× 山本 洋揮 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We synthesized tannic acid derivatives with pendant cyclohexyl acetal moieties (TA-CVEn), butyl acetal moieties (TA-BVEn), and adamantyl ester moieties (TA-ADn) by the reaction of tannnic acid (TA) with cyclohexyl vinyl ether (CVE), butyl vinyl ether (BVE), and adamantyl bromo acetate (AD) in various feeds ratios. The synthesized TA-CVEn, TA-BVEn, and TA-ADn had good solubility, good film-forming ability, and high thermal stability relevant to application of photolithography materials. However, only TA-BVE97 and TA-AD74 can be used as positive-type photo-resist materials using 2.38wt% TMAH aq. as developer due to the result of thickness loss property. Furthermore, their resist-sensitivity upon EUV exposure tool and etching durability were adequate and they have high potential as next-generation resist material for EUV photolithography. | |||||
書誌情報 |
Journal of Photopolymer Science and Technology 巻 31, 号 2, p. 221-225, 発行日 2018-10 |
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出版者 | ||||||
出版者 | The Society of Photopolymer Science and Technology | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0914-9244 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.2494/photopolymer.31.221 |