WEKO3
アイテム
{"_buckets": {"deposit": "8ecc6c01-2eae-4e7c-b257-e019e015fe3c"}, "_deposit": {"created_by": 1, "id": "49475", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "49475"}, "status": "published"}, "_oai": {"id": "oai:repo.qst.go.jp:00049475", "sets": ["1"]}, "author_link": ["499695", "499694", "499693", "499689", "499692", "499690", "499691"], "item_8_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2018-12", "bibliographicIssueDateType": "Issued"}, "bibliographicPageStart": "245701", "bibliographicVolumeNumber": "124", "bibliographic_titles": [{"bibliographic_title": "Journal of Applied Physics"}]}]}, "item_8_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "The broad Z1=2 peak, was commonly observed by conventional deep level transient spectroscopy in as-grown and at high concentrations in radiation damaged 4H-SiC. The peak has two components, namely, Z1 and Z2, of which activation energies for electron emissions are 0.59 and 0.67 eV, respectively. We assign that these components have negative-U ordered acceptor levels of carbon vacancy (Vc) defects at hexagonal/pseudo-cubic sites, respectively. ", "subitem_description_type": "Abstract"}]}, "item_8_publisher_8": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "AIP Publishing"}]}, "item_8_relation_14": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.5063773", "subitem_relation_type_select": "DOI"}}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Capan, Ivana"}], "nameIdentifiers": [{"nameIdentifier": "499689", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Brodar, Tomislav"}], "nameIdentifiers": [{"nameIdentifier": "499690", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Coutinho, Jose"}], "nameIdentifiers": [{"nameIdentifier": "499691", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohshima, Takeshi"}], "nameIdentifiers": [{"nameIdentifier": "499692", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "P., Markevich Vladimir"}], "nameIdentifiers": [{"nameIdentifier": "499693", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "R., Peaker Anthony"}], "nameIdentifiers": [{"nameIdentifier": "499694", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "大島 武", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "499695", "nameIdentifierScheme": "WEKO"}]}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling"}]}, "item_type_id": "8", "owner": "1", "path": ["1"], "permalink_uri": "https://repo.qst.go.jp/records/49475", "pubdate": {"attribute_name": "公開日", "attribute_value": "2019-01-18"}, "publish_date": "2019-01-18", "publish_status": "0", "recid": "49475", "relation": {}, "relation_version_is_last": true, "title": ["Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling"], "weko_shared_id": -1}
Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling
https://repo.qst.go.jp/records/49475
https://repo.qst.go.jp/records/49475e8c43101-a0fc-4912-9aa1-4c32856b9144
Item type | 学術雑誌論文 / Journal Article(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2019-01-18 | |||||
タイトル | ||||||
タイトル | Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Capan, Ivana
× Capan, Ivana× Brodar, Tomislav× Coutinho, Jose× Ohshima, Takeshi× P., Markevich Vladimir× R., Peaker Anthony× 大島 武 |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The broad Z1=2 peak, was commonly observed by conventional deep level transient spectroscopy in as-grown and at high concentrations in radiation damaged 4H-SiC. The peak has two components, namely, Z1 and Z2, of which activation energies for electron emissions are 0.59 and 0.67 eV, respectively. We assign that these components have negative-U ordered acceptor levels of carbon vacancy (Vc) defects at hexagonal/pseudo-cubic sites, respectively. | |||||
書誌情報 |
Journal of Applied Physics 巻 124, p. 245701, 発行日 2018-12 |
|||||
出版者 | ||||||
出版者 | AIP Publishing | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1063/1.5063773 |